2SB1386 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -6 v collector current i c -5 a collector current(pulse) i cp *-10 a collector power dissipation p c 0.5 w junction temperature tj 150 storage temperature t stg -55to+150 * single pulse, pw=10ms electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =-50a -30 v collector-emitter breakdown voltage bv ceo i c =-1ma -20 v emitter-base breakdown voltage bv ebo i e =-50a -6 v collector cutoff current i cbo v cb =-20v -0.5 a emitter cutoff current i ebo v eb =-5v -0.5 a dc current transfer ratio v ce(sat) i c =-4a,i b =-0.1a -1 v collector-emitter saturation voltage hfe v ce =-2v, i c =-0.5a 82 390 transition frequency c ob v ce =-6v, i e =50ma, f=30mhz 120 mhz output capacitance f t v cb =-20v, i e =0a, f=1mhz 60 pf h fe classification marking rank p q r hfe 82 180 120 270 180 390 bh features low vce(sat). v ce(sat) = -0.35v (typ.) (i c /i b = -4a / -0.1a) excellent dc current gain epitaxial planar type pnp silicon transistor sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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